View STTA306B_429289.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

(R)
STTA306B
TURBOSWITCHTM ULTRA-FAST HIGH VOLTAGE DIODE
MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM trr (typ) VF (max) 3A 600 V 20 ns 1.65 V
K
FEATURES AND BENEFITS SPECIFIC TO FREEWHEEL MODE OPERATIONS: FREEWHEEL OR BOOSTER DIODE. ULTRA-FAST, AND SOFT RECOVERY. VERY LOW OVERALL POWER LOSSES IN BOTH THE DIODE AND THE COMPANION TRANSISTOR. HIGH FREQUENCY OPERATIONS.
A NC
DPAK
DESCRIPTION The TURBOSWITCH is a very high performance series of ultra-fast high voltage power diodes. TURBOSWITCH family drastically cuts losses in both the diode and the associated switching IGBT or MOSFET in all freewheel mode operations and is particulary suitable and efficient in motor control ABSOLUTE RATINGS (limiting values) Symbol VRRM IF(RMS) IFRM IFSM Tj Tstg Parameter Repetitive peak reverse voltage RMS forward current Repetitive peak forward current tp=5 s F=5 kHz square Value 600 6 20 35 125 - 65 to + 150 Unit V A A A C C freewheel applications and in booster diode applications in Power Factor Control circuitries. Packaged in DPAK, these 600V devices are particularly intended for use on 240V domestic mains.
Surge non repetitive forward current tp=10 ms sinusoidal Maximum operating junction temperature Storage temperature range
TM : TURBOSWITCH is a trademark from STMicroelectronics
November 1999 - Ed: 3C
1/8
STTA306B
THERMAL AND POWER DATA Symbol Rth (j-c) P1 Pmax Parameter Junction to case Conduction power dissipation Total power dissipation Pmax = P1 + P3 (P3 = 10% P1) IF(AV) = 1.5A, = 0.5 Tc = 110C Tc = 108C Tests conditions Value 6 2.5 2.8 Unit C/W W W
STATIC ELECTRICAL CHARACTERISTICS Symbol VF ** IR * Vto Rd
Test pulse :
Parameter Forward voltage drop Reverse leakage current Threshold voltage Dynamic resistance
* tp = 380 s, < 2% ** tp = 5 ms, < 2%
Tests conditions Tj = 25C Tj = 125C Tj = 25C Tj = 125C Ip < 3.IF(AV) Tj = 125C IF = 3 A IF = 3 A VR = 0.8 X VRRM
Min.
Typ. 1.3 500
Max. 1.85 1.65 20 1200 1.15 175
Unit V A V m
To evaluate the maximum conduction losses use the following equation : P = Vto x IF(AV) + Rd x IF2(RMS) DYNAMIC ELECTRICAL CHARACTERISTICS TURN-OFF SWITCHING Symbol trr Parameter Tj = 25C Test conditions IF=0.5A IR=1A Irr=0.25A IF=1A dIF/dt= -50A/s VR=30V IF=3A VR=400V dIF/dt = -16A/s dIF/dt = -50A/s IF=3A VR=400V dIF/dt = -50A/s Min. Typ. Max. Unit 20 50 A 1.2 2.0 1.1 ns
IRM
Maximum reverse recovery current Softness factor
Tj = 125C
S factor
Tj = 125C
TURN-ON SWITCHING Symbol tfr VFP Parameter Forward recovery time Peak forward voltage Tj = 25C Tj = 25C Test conditions IF=3A dIF/dt = 16A/s Measured at 1.1 x VFmax IF=2A dIF/dt = 16A/s Min. Typ. Max. Unit 500 10 ns V
2/8
STTA306B
Fig. 1: Conduction losses versus average current.
P1(W) 3.0
= 0.1 = 0.2 = 0.5
Fig. 2: Forward voltage drop versus forward current (maximum values).
IFM(A) 5E+1
2.5 2.0 1.5 1.0 0.5
= 0.05
1E+1
Tj=125C
=1
Tj=25C
1E+0
1E-1
IF(av) (A) 0.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
1E-2 0.0 0.5 1.0 1.5
VFM(V) 2.0 2.5 3.0 3.5
Fig. 3: Relative variation of thermal transient impedance junction to ambient versus pulse duration (recommended pad layout).
1E+0
Fig. 4: Peak reverse recovery current versus dIF/dt (90% confidence).
IRM(A)
VR=400V Tj=125C IF=2*IF(av)
Zth(j-a) (C/W)
= 0.5 = 0.2
9 8 7 6 5 4
1E-1
= 0.1
IF=IF(av)
1E-2
Single pulse
3
T
2 1 dIF/dt(A/s) 0 20 40 60 80 100 120 140 160 180 200
tp
tp(s)
1E-3 1E-3 1E-2 1E-1 1E+0 1E+1
=tp/T
0
1E+2 5E+2
Fig. 5: Reverse recovery time versus dIF/dt (90% confidence).
trr(ns) 350 300 250 200 150 100 50 0 0 20
IF=IF(av) IF=2*IF(av) VR=400V Tj=125C
Fig. 6: Softness factor (tb/ta) versus dIF/dt (typical values).
1.6 1.4 1.2 1.0 0.8 0.6 S factor
IF<2*IF(av) VR=400V Tj=125C
dIF/dt(A/s) 40 60 80 100 120 140 160 180 200
0.4 0.2 0 20 40 60
dIF/dt(A/s) 80 100 120 140 160 180 200
3/8
STTA306B
Fig. 7: Relative variation of dynamic parameters versus junction temperature (reference Tj=125C).
1.1
Fig. 8: Transient peak forward voltage versus dIF/dt (90% confidence).
VFP(V) 24 22 20 18 16 14 12 10 8 6 4 2 0
IF=IF(av) Tj=125C
1.0
S factor
0.9
IRM
0.8 Tj(C) 0.7 25 50 75 100 125
dIF/dt(A/s) 0 20 40 60 80 100 120 140 160 180 200
Fig. 9: Forward recovery time versus dIF/dt (90% confidence).
tfr(ns) 300 250 200 150 100 50 dIF/dt(A/s) 0 0 20 40 60 80 100 120 140 160 180 200
IF=IF(av) VFR=1.1*VF max. Tj=125C
Fig. 10: Junction capacitance versus reverse voltage applied (typical values).
10 C(pF)
F=1MHz
5
2 VR(V) 1 1 10 100 200
4/8
STTA306B
APPLICATION DATA The TURBOSWITCHTM is especially designed to provide the lowest overall power losses in any Freewheel Mode application (see fig. A) considering both the diode and the companion transistor, thus optimizing the overall performance in the end application. The way of calculating the power losses is given below :
TOTAL LOSSES due to the diode P = P1+ P2+ P3+ P4+ P5
Watts
CONDUCTION LOSSES in the diode
REVERSE LOSSES in the diode
SWITCHING LOSSES in the diode
SWITCHING LOSSES in the transistor due to the diode
Fig. A : "FREEWHEEL" MODE
SWITCHING TRANSISTOR
DIODE: TURBOSWITCH
IL
VR
tp T F = 1/T = tp/T
LOAD
5/8
STTA306B
APPLICATION DATA (Cont'd) Fig. B : STATIC CHARACTERISTICS
I IF Rd VR V IR V to VF
Conduction losses : P1 = Vto x IF(AV) + Rd x IF2(RMS)
Reverse losses : P2 = VR x IR x (1 - )
Fig. C : TURN-OFF CHARACTERISTICS
V IL TRANSISTOR I t
Turn-on losses : (in the transistor, due to the diode) P5 =
VR x IRM 2 x (3 + 2 x S) x F 6 x dIF dt VR x IRM x IL x (S + 2) x F + 2 x dIF dt
I dI F /dt V I RM ta tb t dI R /dt VR
trr = ta + tb
I dIF /dt = VR /L V IRM ta tb t dI R /dt VR
trr = ta + tb S = tb/ta
DIODE
S = tb / ta
RECTIFIER OPERATION
Turn-off losses (in the diode) :
P3 =
VR x IRM 2 x S x F 6 x dIF dt
P3 and P5 are suitable for power MOSFET and IGBT
6/8
STTA306B
APPLICATION DATA (Cont'd) Fig. D : TURN-ON CHARACTERISTICS
IF dI F /dt I Fmax
Turn-on losses : P4 = 0.4 (VFP - VF) x IFmax x tfr x F
t
0 VF V Fp
1.1V F 0 tfr
VF t
7/8
STTA306B
PACKAGE MECHANICAL DATA DPAK DIMENSIONS REF. A A1 A2 B B2 C C2 D E G H L2 L4 V2 FOOTPRINT DIMENSIONS (in millimeters)
6.7
Millimeters Min. Max 2.20 2.40 0.90 1.10 0.03 0.23 0.64 0.90 5.20 5.40 0.45 0.60 0.48 0.60 6.00 6.20 6.40 6.60 4.40 4.60 9.35 10.10 0.80 typ. 0.60 1.00 0 8
Inches Min. Max. 0.086 0.094 0.035 0.043 0.001 0.009 0.025 0.035 0.204 0.212 0.017 0.023 0.018 0.023 0.236 0.244 0.251 0.259 0.173 0.181 0.368 0.397 0.031 typ. 0.023 0.039 0 8
6.7
3 3 1.6 2.3 2.3 1.6
Ordering type
Marking
Package DPAK DPAK
Weight 0.3 g. 0.3 g.
Base qty 75 2500
Delivery mode Tube Tape & reel
STTA306B A306 STTA306B-TR A306 Epoxy meets UL94,V0
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics (c) 1999 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 8/8

▲Up To Search▲

Price & Availability of STTA306B

	To Download STTA306B Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .